该产品为UVA-LED芯片的关键上游产品,经过光刻、电极蒸镀等工艺制备成UVA-LED芯片后,可应用于紫外固化、生物制药等领域。目前我司已成功开发尺寸为2/4英寸发光波长在325nm波段的UVA-LED外延片,波长均匀性好,发光功率达到国内行业一流水平。
1. Structure, Mapping and EL Characteristics
2. Electrical and Physical Characteristics
Parameters | Symbol | Tool | Unit | Min. | Typ. | Max. | Remarks |
Total Epi-layer thickness | THK. | PL Mapper | um | 4.5 | 5 | 5.5 | Over 10 wafers |
Substrate (Al2O3) | - | Micrometer | um | 890 | 900 | 910 | Over 10 wafers |
Sheet resistance (n-AlGaN) | Rs | LEI | Ω/sq. | 300 | 360 | 400 | Over 10 wafers |
Parameters | Symbol | Condition | Unit | Min. | Typ. | Max. | Remarks |
Output Power | Po | 40mA | a.u. | 130 | 160 | 200 | Over 5 points |
Peak Wavelength | Wp | nm | 315 | 325 | 330 | Over 5 points | |
FWHM | Wh | nm | 14 | 15 | 17 | Over 5 points | |
Forward Voltage | Vf | V | 8 | 9 | 10 | Over 5 points (In contact) |
3. Visual inspection
Item | Value | Remarks | |
1 | Edge exclusion | 4mm | - |
2 | Surface Crack | <50 | - |
3 | Surface Haze | None | - |
4 | Hillock | <200ea @1mm2, 50X optical microscope | - |
5 | Scratch | None | - |
6 | Contamination | None | - |
7 | Bowing | <150um | - |