4-inch AlN single crystal composite substrate
4-inch AlN single crystal composite substrate
4-inch AlN single crystal composite substrate
- Detail
- Parameters
This product can be used as a substrate for nitride deep ultraviolet band optoelectronic devices and electronic power devices. Therefore, it can fundamentally improve device performance and yield by reducing the density of material defects on it, which is a prerequisite for the development of high-performance nitride devices. This product is prepared by high-temperature annealing process of flat sapphire growth. It can lay a good foundation for the assembly and preparation of deep ultraviolet-based optoelectronic devices.
Parameters | Specification |
Materials | AIN (Flat Sapphire Substrate) |
Diameter | 100.0 mm |
Substrate thickness | 650 ± 10 µm |
Orientation | c-plane ± 0.2° |
Primary flat orientation | a-plane |
Primary flat length | 30 ± 1 mm |
AlN thickness | 0.5 µm ~ 1.5 µm |
（002）Rocking curve | ≤ 70 arcsec |
（102）Rocking curve | ≤ 210 arcsec |
Edge excluding length | ≤ 2 mm |
Surface roughness | ≤ 0.8 nm |
Thickness uniformity | ≤ 2% |
