High thermo-conductivity AlN ceramic substrate

High thermo-conductivity AlN ceramic substrate

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High thermo-conductivity AlN ceramic substrate

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  • Parameters

DPC AlN ceramic substrate is achieved by DPC technique. By carefully designing and depositing metal circuit on high thermo-conductivity

AlN substrate, it is with the advantages of fine circuit deposition, high thermo conductivity, and excellent stability. This product is proper for various device packaging cases, particularly for vehicle and RGB multi-chips integrated packaging. The responding packaging products

are widely used in various fields, including motor-vehicle and stage illumination.


Characteristics:

l Customization: It is possible to customize the unit size, circuit shape, cooper thickness as well as various surface treatments.

l On the basis of high thermo-conductive ceramic substrate, the thermo conductivity is as high as 180 W/mK.

l By employing techniques of ceramic metallization, photolithography, vertical interconnection, the high resolution whose line width is                 as low as 1 mil is achieved.

l The manipulatable surface roughness ranging from 0.05 to 0.5 µm meets the technique requirement of reflow and eutectic soldering.

l The surface compound of NiAu/NiPdAu/AuSn totally meets the demand of reflow, bond and eutectic soldering.